Projects funded by the NCN
Electron blocking layer and its influence on nitride light emmiters parameters.
2015/17/N/ST7/03934
Keywords:
electron blocking layer nitride laser diodes
Descriptors:
- ST7_5: Micro- and nanelectronic, optoelectronic and photonic components
- ST7_2: Electrical engineering: power components and/or systems
Panel:
ST7 - Systems and communication engineering: electronics, communication, optoelectronics
Host institution :
Instytut Wysokich Ciśnień PAN
woj. mazowieckie
Principal investigator (from the host institution):
Number of co-investigators in the project: 2
Call: PRELUDIUM 9 - announced on 2015-03-16
Amount awarded: 47 000 PLN
Project start date (Y-m-d): 2016-02-02
Project end date (Y-m-d): 2017-02-01
Project duration:: 12 months (the same as in the proposal)
Project status: Project settled
Project description
Download the project description in a pdf file
Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.
Equipment purchased [PL]
- Komputer przenośny (4 918 PLN)
Information in the final report
- Publication in academic press/journals (2)
- Long-term degradation of InGaN-based laser diodes: Role of defectsAuthors:D. Monti, M. Meneghini, C. De Santi, G. Meneghesso, E. Zanoni, A. Bojarska, P. PerlinAcademic press:Microelectronics Reliability (rok: 2017, tom: 76-77, strony: 584-587), Wydawca: ElsevierStatus:PublishedDOI:10.1016/j.microrel.2017.06.043 - link to the publication
- Role of the electron blocking layer in the graded-index separate confinement heterostructure nitride laser diodesAuthors:Agata Bojarska, Jakub Goss, Szymon Stanczyk, Irina Makarowa, Dario Schiavon, Robert Czernecki, Tadeusz Suski, Piotr PerlinAcademic press:Superlattices and Microstructures (rok: 2018, tom: 116, strony: 114-121), Wydawca: ElsevierStatus:PublishedDOI:10.1016/j.spmi.2018.02.016 - link to the publication