Electron blocking layer and its influence on nitride light emmiters parameters.
2015/17/N/ST7/03934
Keywords
Descriptors
- ST7_5: Mikro- i nanoelektronika, optoelektronika
- ST7_2: Elektrotechnika, elektronika: półprzewodniki, elementy i układy, systemy
Panel
ST7 – Systems and communication engineering: electronics, communication, optoelectronics
Host institution
Instytut Wysokich Ciśnień PAN
Voivodeship: mazowieckie
Principal investigator (from the host institution)
Number of co-investigators in the project: 2
Call
PRELUDIUM 9 – announced on 2015-03-16
- Amount awarded
- 47 000 PLN
- Project start date
- 2016-02-02
- Project end date
- 2017-02-01
- Project duration
- 12 months (the same as in the proposal)
- Project status
- Project settled
Project description
Download the project description in a pdf file
Note — project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.
Equipment purchased [PL]
- Komputer przenośny. Cost: 4 918 PLN
Information in the final report
Publication in academic press/journals (2)
-
Role of the electron blocking layer in the graded-index separate confinement heterostructure nitride laser diodes
- Authors:
- Agata Bojarska, Jakub Goss, Szymon Stanczyk, Irina Makarowa, Dario Schiavon, Robert Czernecki, Tadeusz Suski, Piotr Perlin
- Academic press:
- Superlattices and Microstructures (year: 2018, volume: 116, pages: 114-121), Publisher: Elsevier
- Status:
- Published
- DOI:
- 10.1016/j.spmi.2018.02.016 – link to the publication
-
Long-term degradation of InGaN-based laser diodes: Role of defects
- Authors:
- D. Monti, M. Meneghini, C. De Santi, G. Meneghesso, E. Zanoni, A. Bojarska, P. Perlin
- Academic press:
- Microelectronics Reliability (year: 2017, volume: 76-77, pages: 584-587), Publisher: Elsevier
- Status:
- Published
- DOI:
- 10.1016/j.microrel.2017.06.043 – link to the publication