Band structure investigations and carrier dynamics of InAs/InP quantum dots grown for quantum cascade laser application.
2014/15/N/ST7/04708
Keywords
Descriptors
- ST7_2: Elektrotechnika, elektronika: półprzewodniki, elementy i układy, systemy
- ST7_5: Mikro- i nanoelektronika, optoelektronika
Panel
ST7 – Systems and communication engineering: electronics, communication, optoelectronics
Host institution
Politechnika Wrocławska, Wydział Podstawowych Problemów Techniki
Voivodeship: dolnośląskie
Principal investigator (from the host institution)
Number of co-investigators in the project: 3
Call
PRELUDIUM 8 – announced on 2014-09-15
- Amount awarded
- 127 488 PLN
- Project start date
- 2015-08-10
- Project end date
- 2018-08-09
- Project duration
- 36 months (the same as in the proposal)
- Project status
- Project settled
Equipment purchased [PL]
- Komputer przenośny (notebook) do obliczeń i analizy danych eksperymentalnych.
Information in the final report
Publication in academic press/journals (2)
-
Lateral interdot coupling among dense ensemble of InAs quantum dots grown on InP substrate observed at cryogenic temperatures
- Authors:
- A. Maryński, M. Syperek, M. Pieczarka, M.Gawełczyk, J. Misiewicz, V. Liverini, M. Beck, J.Faist, G.Sęk
- Academic press:
- Journal of Physics (year: 2017, volume: 906, pages: 12008), Publisher: IOP Publishing
- Status:
- Published
- DOI:
- 10.1088/1742-6596/906/1/012008 – link to the publication
-
Optical and electronic properties of symmetric InAs/InGaAlAs/InP quantum dots formed by a ripening process in molecular beam epitaxy: a promising system for broad-range single-photon telecom emitters
- Authors:
- P. Holewa, M. Gawełczyk, A. Maryński, P. Wyborski, J. P. Reithmaier, G. Sęk, M. Benyoucef, M. Syperek
- Status:
- Accepted for publication