Projects funded by the NCN
Electron-phonon coupling in epitaxial graphene grown on SiC: a study using solution gating
2014/13/N/ST3/03772
Keywords:
graphene SiC Raman solution-gating
Descriptors:
- ST3_7: Spintronics
- ST3_12: Molecular electronics
Panel:
ST3 - Condensed matter physics: structure, electronic properties, fluids, nanosciences, biological physics
Host institution :
Uniwersytet Warszawski, Wydział Fizyki
woj. mazowieckie
Principal investigator (from the host institution):
Number of co-investigators in the project: 2
Call: PRELUDIUM 7 - announced on 2014-03-17
Amount awarded: 149 760 PLN
Project start date (Y-m-d): 2015-02-12
Project end date (Y-m-d): 2018-02-11
Project duration:: 36 months (the same as in the proposal)
Project status: Project settled
Information in the final report
- Publication in academic press/journals (2)
- In Situ Raman Spectroscopy of Solution-Gated Graphene on CopperAuthors:J. Binder, R. Stępniewski, W. Strupiński, A. WysmołekAcademic press:ACTA PHYSICA POLONICA A (rok: 2017, tom: 132, strony: 360), Wydawca: Institute of Physics Polish Academy of SciencesStatus:PublishedDOI:10.12693/APhysPolA.132.360 - link to the publication
- In situ Raman spectroscopy of the graphene / water interface of a solution-gated field-effect transistor: electron – phonon coupling and spectroelectrochemistryAuthors:J. Binder, J. M. Urban, R. Stepniewski, W. Strupinski, A. WysmolekAcademic press:Nanotechnology (rok: 2016, tom: 27, strony: 45704), Wydawca: IOP PublishingStatus:PublishedDOI:10.1088/0957-4484/27/4/045704 - link to the publication